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APT2X101DL40J 400V 100A Ultrafast Soft Recovery Dual Rectifier Diode
PRODUCT APPLICATIONS
* Anti-Parallel Diode -Switchmode Power Supply -Inverters * Free Wheeling Diode - Motor Controllers - Converters * * * * Snubber Diode Uninterruptible Power Supply Induction Heating High Speed Rectifiers
2 1 4
3
PRODUCT FEATURES
* Ultrafast Recovery Times (trr) * Soft Recoverery Characteristics * Low Forward Voltage * Low Forward Voltage * High Blocking Voltage * Low Leakage Current
PRODUCT BENEFITS
* Low Losses * Low Noise Switching
SO
ISOTOP fi
2 T-
27
"UL Recongnized"
file # 145592
* Cooler Operation * Higher Reliability Systems * Increased System Power Density
2
3
1
4
APT2X101DL40J
MAXIMUM RATINGS
Symbol
VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG
All Ratings per Diode: TC = 25C unless otherwise specified.
Ratings Unit
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current (TC = 127C, Duty Cycle = 0.5) RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms) Operating and Storage Junction Temperature Range
400
Volts
100 204 1000 -55 to 175 C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
IF = 100A VF Forward Voltage IF = 150A IF = 200A IF = 100A, TJ = 150C IRM CT LS Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Series Inductance _Lead to Lead 5mm from Base) VR = 400V VR = 400V, TJ = 125C 215 10
Min
Typ
1.0 1.1
Max
1.125
Unit
Volts 1.2 .95 500 1000 pF nH
052-6322 Rev E 9 - 2009
A
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM
APT2X101DL40J
Min Typ
40 ns 120 IF = 100A, diF/dt = -200A/s VR = 268V, TC = 25C 830 13 240 IF = 100A, diF/dt = -200A/s VR = 268V, TC = 125C 3500 25 160 IF = 100A, diF/dt = -1000A/ s VR = 268V, TC = 125C 6600 76 nC Amps ns nC Amps ns nC Amps
Characteristic / Test Conditions
Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C
Max
Unit
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RJC RJA WT
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance
Min
Typ
Max
0.42
Unit
C/W
20 1.03 oz g 10 lb*in N*m
Package Weight 29.2 Maximum Mounting Torque 1.1
Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.45 ZJC, THERMAL IMPEDANCE (C/W) 0.40 0.35 0.30 0.25 0.20 0.15 0.1 0.05 0 10-5 10-4 10-3 10-2 10-1
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
1
10
RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6322 Rev E 9 - 2009
TYPICAL PERFORMANCE CURVES
400 350 IF, FORWARD CURRENT (A) 300 250 200 150 100 50 0 0 TJ= 150C TJ= 125C TJ= 25C 0.5 1 TJ= 55C 1.5 2 2.5 trr, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0 100A 200A 150A 50A
R
APT2X101DL40J
T = 125C J V = 268V
Qrr, REVERSE RECOVERY CHARGE (nC)
IRRM, REVERSE RECOVERY CURRENT (A)
VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 9000 200A T = 125C J V = 268V 8000 R 100A 7000 150A 6000 5000 4000 3000 2000 1000 0 50A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 90 T = 125C 200A 50A J V = 268V 80 R 70 60 50 40 30 20 10 0 150A 100A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.4 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 250
200 1.0 0.8 tRR 0.6 0.4 0.2 0 0 25 50 75 100 125 150 IRRM QRR 50
Duty cycle = 0.5 TJ = 45C
IF(AV) (A)
150
100
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 2000 CJ, JUNCTION CAPACITANCE (pF) 1750 1500 1250 1000 750 500 250 10 100 200 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 0 1
75 100 125 150 175 Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
0
25
50
052-6322 Rev E 9 - 2009
Vr +18V 0V D.U.T. diF /dt Adjust
APT2X101DL40J
trr/Qrr Waveform
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193)
1.95 (.077) 2.14 (.084)
Cathode 1
Anode 1
052-6322 Rev E 9 - 2009
38.0 (1.496) 38.2 (1.504)
Cathode 2
Dimensions in Millimeters and (Inches)
Anode 2
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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